型号:

IXTH110N10L2

RoHS:无铅 / 符合
制造商:IXYS描述:MOSFET N-CH 100V 110A TO-247
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
标准包装 30
系列 Linear L2™
FET 型 MOSFET N 通道,金属氧化物
FET 特点 标准
漏极至源极电压(Vdss) 100V
电流 - 连续漏极(Id) @ 25° C 110A
开态Rds(最大)@ Id, Vgs @ 25° C 18 毫欧 @ 500mA,10V
Id 时的 Vgs(th)(最大) 4.5V @ 250µA
闸电荷(Qg) @ Vgs 260nC @ 10V
输入电容 (Ciss) @ Vds 10500pF @ 25V
功率 - 最大 600W
安装类型 通孔
封装/外壳 TO-247-3
供应商设备封装 TO-247
包装 -
其它名称 Q5291125
相关参数
ZXMP6A16DN8TA Diodes Inc MOSFET 2P-CH 60V 3.9A 8-SOIC
IRF7752 International Rectifier MOSFET 2N-CH 30V 4.6A 8-TSSOP
BZLN-10-LH Honeywell Sensing and Control PREWIRED ENCLOSED SWES BZLNTOP
M2029B2B1W03 NKK Switches SW TOGGLE DPDT THR SILV .250"PC
ZXMP6A16DN8TA Diodes Inc MOSFET 2P-CH 60V 3.9A 8-SOIC
MA-505 23.0000M-C:ROHS EPSON CRYSTAL 23.0000MHZ 18PF SMD
FXO-HC535R-128.067 Fox Electronics OSC 128.067 MHZ 3.3V HCMOS SMD
49384 Wiha TWEEZER UNIV FINE PTS AA SA
SP8M9TB Rohm Semiconductor MOSFET N+P 30V 9A/5A 8-SOIC
BZLN-10-RH Honeywell Sensing and Control PREWIRED ENCLOSED SWES BZLNTOP
SP8M9TB Rohm Semiconductor MOSFET N+P 30V 9A/5A 8-SOIC
FXO-HC535R-133 Fox Electronics OSC 133 MHZ 3.3V HCMOS SMD
SP8M9TB Rohm Semiconductor MOSFET N+P 30V 9A/5A 8-SOIC
XW2Z-100J-B29 Omron Electronics Inc-IA Div CABLE TERMINAL BLOCK SERVO 1M
M2028B2B1W03 NKK Switches SW TOGGLE DPDT THR SILV .250"PC
ECW-F2W475JA Panasonic Electronic Components CAP FILM 4.7UF 450VDC RADIAL
FXO-HC735R-150.055 Fox Electronics OSC 150.055 MHZ 3.3V HCMOS SMD
IRF7750 International Rectifier MOSFET 2P-CH 20V 4.7A 8-TSSOP
IXFH36N55Q IXYS MOSFET N-CH 550V 36A TO-247
SI5504BDC-T1-GE3 Vishay Siliconix MOSFET N/P-CH 30V 1206-8